1·The emission threshold voltage can thus be decreased.
降低发射阈值电压。
2·A disadvantage is in the increased threshold voltage.
缺点是使阈值电压升高。
3·The transistor element comprises a predefined threshold voltage.
晶体管元件包括预定的阈值电压。
4·The body region was doped high to increase the back gate threshold voltage.
增加体区掺杂，以提高背栅阈值电压；
5·A threshold voltage model of DMOS by radiation induced positive spatial charge is proposed.
提出了一种DMOS辐照正空间电荷阈值电压模型。
6·We deduced a expressions for threshold voltage temperature coefficient of short channel MOST.
推导了了一个短沟道MOST阈值电压温度系数表达式；
7·In addition, the threshold voltage is capable of being finely tuned with a proper gate bias .
除此之外，由于强烈的闸极耦合效应，在分离的上闸极加上适当的偏压，便可精确地调控临限电压。
8·Deduced has been a relationship between the threshold voltage of MOSFET and the radiation dose rate.
计算了MOSFET阈电压与辐射剂量率之间的关系。
9·Threshold voltage window is approx 17V, and this transistor has nondestructive readout characteristic.
这种晶体管的阈值电压窗口约17伏，且具有不破坏的读出特性。
10·Our results showed that Fick's second law can successfully explain the variations of threshold voltage.
不论是在有无偏压实验条件下，气体扩散模型可以成功解释氨在五苯环薄膜中的扩散行为。