1·In one embodiment, the dielectric material is silicon oxide.
在一实施例中，该电介质为氧化硅。
2·The silicon oxide layer is formed by reacting a first gas mixture and a second gas mixture.
氧化硅层是由第一个反应气体混合物和第二气体混合物。
3·OBJECTIVE To develop oral mucosal ointment of organic silicon oxide and evaluate its matrix.
目的研制有机硅氧化物类口腔黏膜药膏及对其基质进行评价。
4·A method for forming a silicon oxide layer for use in integrated circuit fabrication is provided.
为形成了集成电路制造中使用的硅氧化层的方法提供。
5·Usually, the first layer is of silicon oxide, an insulator, which is etched to a desired thickness.
通常，第一层为氧化硅，绝缘体，其被蚀刻至所需的厚度。
6·The invention provides a method for manufacturing CVD silicon oxide capable of improving forming quality.
本发明提供了一种可提高成形质量的CVD氧化硅制造方法。
7·Shatterproof is intended to replace silicon oxide, which serves a similar purpose but is prone to stress cracking.
碎，目的是取代氧化硅，它相似的目的，但很容易应力开裂。
8·At the same time, the influence of plasma charging and ion bombardment on the quality of silicon oxide are analyzed.
我们同时对反应离子刻蚀工艺中的等离子体充电效应和离子轰击对氧化硅造成的损伤进行了讨论。
9·The silicon oxide films on aluminum alloys matrix were prepared by chemical vapor deposition (CVD) in ambient pressure.
采用常压CVD方法在铝合金基底上制备出硅氧化合物陶瓷膜层。
10·Silicon oxide ion barrier film was successfully fabricated on the input-face of microchannel plate by magnetron sputtering method.
本文利用射频磁控溅射方法，在微通道板输入面上成功地制备出二氧化硅防离子反馈膜。