1·A method of manufacturing a metal oxide semiconductor (500).
一种制造金属氧化物半导体的方法(500)。
2·A gate structure of the metal oxide semiconductor is etched (510).
将金属氧化物半导体的栅极构造蚀刻(510)。
3·High mobility P-channel power metal oxide semiconductor field effect transistors.
高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
4·The oxygen-sensitive characters of metal-oxide semiconductor oxygen sensor is re-ported.
研究了一种氧化物半导体型氧敏元件的氧敏特性。
5·The oxygen - sensitive characters of metal - oxide semiconductor oxygensensor is re - ported.
研究了一种氧化物半导体型氧敏元件的氧敏特性。
6·Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor.
或者，本发明的另一个目的在于提供一种使用该氧化物半导体的半导体装置。
7·The dependence of grain boundary on conductivity in NTC polycrystalline oxide semiconductor was discussed.
主要讨论NTC多晶氧化物半导体中晶界对电导的影响。
8·Provided is a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same.
本发明提供了一种互补金属氧化物半导体（CMOS）装置及其制造方法。
9·They studied the pressure dependence of electrical properties of metal-oxide semiconductor in a separate paper.
他们在另一篇文章中给出关于金属氧化物半导体电学特性对压强的依赖关系的研究结果。
10·ZnO nanoparticle is an important oxide semiconductor material, which is of potential applications in many areas.
纳米氧化锌颗粒是重要的氧化物半导体材料，具有广泛的应用范围。